Bottom left: In-situ probing of domain switching in BiFeO3 by transmission electron microscopy (image by M. Taheri & C. Winkler, sample by A.R. Damodaran, J. Karthik, & L.W. Martin, UIUC). Reprinted with permission from J. Appl. Phys. 112, 051901. Copyright 2012, AIP Publishing LLC.Hoeganaes Assistant Professor of Metallurgy Mitra Taheri, Ph.D. students Christopher R. Winkler and Michael L. Jablonski, and colleagues from the University of Illinois, Urbana-Champaign published a cover piece on “Accessing Intermediate Ferroelectric Switching Regimes with Time-Resolved Transmission Electron Microscopy” in the September 2012 issue of the Journal of Applied Physics. The piece reports on the authors’ use of in situ transmission electron microscopy to study the dynamics of ferroelectric domains in BiFeO₃ and other ferroelectric materials. These biasing experiments provide a real-time view of the complex dynamics of domain switching and complement scanning-probe techniques, allowing a better understanding of the dynamics of ferroelectric switching, particularly in the vicinity of extended defects, that is needed to incorporate BiFeO₃ into novel spintronics devices and sensors.